ZXTP07012EFF document number: ds33727 rev. 3 - 2 1 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP07012EFF 12v pnp low saturation transistor in sot23f features ? bv ceo > - 12v ? i c = - 4 a continuous collector current ? low saturation voltage v ce(sat) < 75 m v @ 1a ? r ce(sat) = 50 m ? ? h fe characterised up to - 6 a ? high h fe min 4 00 @ 1 a ? 1.5 w power dissipation ? comple mentary n pn type : zxt n 070 12e ff ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability description this low voltage pn p transistor has been designed for applications requiring high gain and very low saturation voltage. the sot23f package is pin compatible with the industry standard sot23 footprint but offers lower profile and higher dissipation for appl ications where power density is of utmost importance. mechanical data ? case: sot 23 f ? case m aterial: molded plastic. green m olding compound . u l flammability classification rating 94v - 0 ? moisture sen sitivity: level 1 per j - std - 020 ? terminals: finish C matte tin plated leads, solderable per mil - std - 202, method 208 ? weight: 0.0 12 grams (approximate) applications ? boost converters ? mosfet and igbt gate drivers ? lamp and relay driver ? motor drive ? siren driver ordering information (note 4 ) product compliance marking reel size (inches) tape width (mm) quantity per reel zxt p 070 12 effta aec - q101 1d 1 7 8 3 , 000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information sot23f device symbol t op v iew pin configuration top view 1d 1 1d1 = product type marking code yw = date code marking y = year : 0~9 w = week : a~z : 1~26 a~z : 27~52 z represents 52 & 53 week sot23f yw c b e c e b
ZXTP07012EFF document number: ds33727 rev. 3 - 2 2 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP07012EFF absolute maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit collector - base voltage v cbo - 12 v collector - emitter voltage v ceo - 12 v emitter - base voltage v ebo - 7 v continuous collector current i c - 4 a peak pulse curren t i cm - 8 a base current i b - 1 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (note 5 ) p d 0.84 6.72 w mw/ c (note 6 ) 1.34 10.72 (note 7 ) 1.50 12.0 (note 8 ) 2.0 16.0 thermal resistance, junction to ambient (note 5 ) r ja 149 c /w (note 6 ) 93 (note 7 ) 83 (note 8 ) 60 thermal resistance, junction to lead (note 9) r jl 43.8 c /w ? j, t stg - 55 to + 150 c esd ratings (note 10 ) characteristic symbol value unit jedec class electrostatic discharge C C notes: 5 . for a device mounted with the exposed collector pad on 1 5mm x 1 5mm 1oz copper that is on a single - sided 1.6mm fr4 pcb ; device is measured under still air conditions whilst operating in a steady - state. 6 . same as note 5, except the device is mounted on 25 mm x 25 mm 2 oz copper . 7 . same as note 5, except the device is mounted on 50 mm x 50 mm 2 oz copper . 8. same as note 7, whilst measured at t < 5 seconds. 9. thermal resistance from junction to solder - point (at the end of the collector lead). 10 . refer to jedec specification jesd22 - a114 and jesd22 - a115.
ZXTP07012EFF document number: ds33727 rev. 3 - 2 3 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP07012EFF thermal characteristics and derating information 100m 1 10 10m 100m 1 10 50mmx50mm fr4, 2oz cu single pulse t amb =25c v ce(sat) limited 1ms 10ms 100ms 1s dc safe operating area -i c collector current (a) -v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 50mmx50mm fr4, 2oz cu 15mmx15mm fr4, 1oz cu derating curve temperature (c) max power dissipation (w) 25mmx25mm fr4, 2oz cu 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 t amb =25c see note (c) transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c see note (c) pulse power dissipation pulse width (s) maximum power (w)
ZXTP07012EFF document number: ds33727 rev. 3 - 2 4 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP07012EFF e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics collector - base breakdown voltage b v cbo - 12 - 23 c = - 100 a collector - emitter breakdown voltage (base open) (note 1 1 ) b v ceo - 12 - 16 c = - 10ma emitter - base breakdown voltage b v ebo - 7 - 8. 4 e = - 100 a collector - base cut o ff current i cbo cb = - 10 v v cb = - 10 v , t a = + 100c emitter - base cut o ff current i e bo e b = - 5.6 v on characteristics (note 1 1 ) static forward current transfer ratio h fe 5 00 4 00 230 15 0 75 0 57 0 3 2 0 210 15 00 c = - 1 0m a, v ce = - 2 v i c = - 1 a, v ce = - 2 v i c = - 4 a, v ce = - 2 v i c = - 6 a, v ce = - 2 v collector - emitter saturation voltage v ce(sat) c = - 0. 5 a, i b = - 2 .5 m a i c = - 1 a, i b = - 100 m a i c = - 1 a, i b = - 5 m a i c = - 2 a, i b = - 1 0 m a i c = - 4 a, i b = - 8 0 m a base - emitter saturation voltage v be(sat) c = - 4 a, i b = - 8 0 m a base - emitter on voltage v be(on) c = - 4 a, v ce = - 2 v small signal characteristics transition frequency f t 1 0 0 25 0 c = - 5 0m a, v ce = - 5 v , f = 50 mhz input capacitance c i b o e b = - 0.5 v, f = 1mhz output capacitance c ob o c b = - 8 v, f = 1mhz delay time t d cc = - 10v, i c = - 500ma, i b1 = i b2 = - 50ma rise time t r s f note: 1 1 . measured under pulsed conditions. pulse width 300s. duty cycle 2%
ZXTP07012EFF document number: ds33727 rev. 3 - 2 5 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP07012EFF typical electrical characteristics (@ t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10 1m 10m 100m 1 100m 1 0.0 0.5 1.0 1.5 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 1.2 0 200 400 600 800 1000 1200 1400 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =200 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =200 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =200 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c - v be(on) (v) - i c collector current (a) typical gain (h fe )
ZXTP07012EFF document number: ds33727 rev. 3 - 2 6 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP07012EFF package outline dimensions please see ap02001 at http://www.diodes.com/ _files/ datasheets/ap02001.pdf for the latest version. sot23f sot23f dim min max typ a 0.80 1.00 0.90 b 0.35 0.50 0.44 c 0.10 0.20 0.16 d 2.80 3.00 2.90 e 0.95 ref e1 0.190 ref e 2.30 2.50 2.40 e1 1.50 1.70 1.65 k 1.20 - - l 0.30 0.65 0.50 l1 0.30 0.50 0.40 r 0.05 0.15 - all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/ _files/ datasheets/ap02001.pdf for the latest version. sot23f dimensions value (in mm) c 0.95 x 0.80 y 1.110 y1 3.000 e1 d b e l1 a r b e1 e c k l x y y1 c
ZXTP07012EFF document number: ds33727 rev. 3 - 2 7 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP07012EFF important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by d iodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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